| PART |
Description |
Maker |
| IS61LV5128-10 IS61LV5128-10B IS61LV5128-10BI IS61L |
IC,SRAM,512KX8,CMOS,TSOP,44PIN,PLASTIC
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO44
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PBGA36
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PBGA36
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36
|
ISSI[Integrated Silicon Solution, Inc]
ISSI [Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| AT27BV800 AT27BV800-12JC AT27BV800-12RC AT27BV800- |
8-Megabit 512K x 16 or 1024K x 8 Unregulated Battery-Voltage High Speed OTP EPROM 512K X 16 OTPROM, 150 ns, PDSO44
8-Megabit 512K x 16 or 1024K x 8 Unregulated Battery-Voltage High Speed OTP EPROM 512K X 16 OTPROM, 150 ns, PQCC44
|
ATMEL[ATMEL Corporation]
Atmel, Corp.
|
| IDT70T653MS10BCI IDT70T653MS12BC 70T653MS15BC8 IDT |
512K X 36 DUAL-PORT SRAM, 15 ns, PBGA256
512K X 36 DUAL-PORT SRAM, 10 ns, PBGA256
HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE
|
Integrated Device Techn...
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
|
| IS61LV51216-10M IS61LV51216-10MI IS61LV51216-10T I |
512K x 16 HIGH SPEED ASYNCHRONOUS 12k × 16高速异
|
Electronic Theatre Controls, Inc.
ISSI[Integrated Silicon Solution, Inc]
ETC
Integrated Silicon Solution Inc
|
| AT29LV512-25TI AT29LV512-25TC AT29LV512-25JI |
512K 64K x 8 3-volt Only CMOS Flash Memory
High Speed CMOS Logic Quad 2-Input NAND Gates 14-PDIP -55 to 125
High Speed CMOS Logic 4-Bit Binary Ripple Counter 14-SOIC -55 to 125
|
Atmel Corp.
|
| IS61LV5128 IS61LV5128-10T IS61LV5128-12TI IS61LV51 |
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
512K x 8 HIGH-SPEED CMOS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IS61WV5128BLL-10KLI-TR IS61WV5128BLL-10BLI IS61WV5 |
512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc
|
| EM636327R-8 |
512K x 32 High Speed Synchronous Graphics DRAM(SGRAM)
|
Etron Tech
|
| CXK77P18E160GB CXK77P18E160GB-42AE CXK77P18E160GB- |
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18)
|
SONY[Sony Corporation]
|
| IS64LV51216 IS64LV51216-12TA3 IS64LV51216-12TLA3 I |
512K X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
|
天津新技术产业园区管理委员会
ISSI[Integrated Silicon Solution, Inc]
|
| BH62UV4000HIG55 BH62UV4000STI55 BH62UV4000DIG55 BH |
Ultra Low Power/High Speed CMOS SRAM 512K X 8 bit
|
Brilliance Semiconductor
|
| IS61LV51216 IS64LV51216 |
(IS61LV51216 / IS64LV51216) 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
|
Integrated Silicon Solution
|
